The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jun. 10, 2022
Integrated circuit devices including a parameter measuring structure and methods of forming the same
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Byounghak Hong, Albany, NY (US);
Wookhyun Kwon, Hwaseong-si, KR;
Hyoeun Park, Cohoes, NY (US);
Kangill Seo, Albany, NY (US);
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01);
Abstract
Integrated circuit devices may include a cell transistor and a parameter measuring structure (e.g., a resistance measuring structure). The cell transistor may be on a first surface of a substrate structure, which is opposite a second surface thereof. The parameter measuring structure may include first and second contact structures that extend through the substrate structure. The second surface of the substrate structure may expose respective portions of the first and second contact structures.