The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Nov. 01, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Hurshvardhan Srivastava, Milpitas, CA (US);

Keith T. Wong, Mountain View, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); C23C 16/40 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); C23C 16/403 (2013.01); C23C 16/407 (2013.01); H01L 21/02175 (2013.01); H01L 21/02178 (2013.01); H01L 21/02181 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01J 37/3244 (2013.01); H01J 2237/3321 (2013.01);
Abstract

Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.


Find Patent Forward Citations

Srivastava, Hurshvardhan. (2025). Flowable chemical vapor deposition of metal oxides (U.S. Patent No. 12211736). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12211736

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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