The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Sep. 20, 2023
Applicant:

Headway Technologies, Inc., Milpitas, CA (US);

Inventors:

Wenyu Chen, San Jose, CA (US);

Yan Wu, Cupertino, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); G11B 5/37 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3909 (2013.01); G11B 5/37 (2013.01); G11B 5/398 (2013.01); G11B 5/3932 (2013.01); G11B 5/3945 (2013.01);
Abstract

A read head is disclosed wherein a Spin Hall Effect (SHE) layer is formed on a free layer (FL) in a sensor and between the FL and top shield (S). Preferably, the sensor has a seed layer, an APreference layer, antiferromagnetic coupling layer, APreference layer, and a tunnel barrier sequentially formed on a bottom shield (S). When the stripe heights of the FL and SHE layer are equal, a two terminal configuration is employed where a current flows between one side of the SHE layer to a center portion thereof and then to S, or vice versa. As a result, a second spin torque is generated by the SHE layer on the FL that opposes a first spin torque from the APreference layer on the FL.


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