The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Aug. 15, 2023
Applicant:
Tdk Corporation, Tokyo, JP;
Inventor:
Tomoyuki Sasaki, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); G11B 5/39 (2006.01); G11C 11/16 (2006.01); H01F 10/193 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H01F 1/40 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3909 (2013.01); G11B 5/39 (2013.01); G11C 11/161 (2013.01); H01F 10/1936 (2013.01); H10B 61/22 (2023.02); H10N 50/10 (2023.02); H10N 50/85 (2023.02); G11B 2005/3996 (2013.01); H01F 1/405 (2013.01);
Abstract
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of ABO, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.