The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

May. 31, 2023
Applicants:

Beijing Boe Technology Development Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Miao Liu, Beijing, CN;

Xueguang Hao, Beijing, CN;

Libin Liu, Beijing, CN;

Teng Chen, Beijing, CN;

Xinyin Wu, Beijing, CN;

Yong Qiao, Beijing, CN;

Xing Yao, Beijing, CN;

Jingquan Wang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3266 (2016.01); G09G 3/20 (2006.01); G09G 3/3233 (2016.01); G11C 19/28 (2006.01); H10K 59/121 (2023.01); H10K 59/126 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3266 (2013.01); G09G 3/2092 (2013.01); G09G 3/3233 (2013.01); G11C 19/28 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0819 (2013.01); G09G 2300/0842 (2013.01); G09G 2300/0861 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01); G09G 2320/045 (2013.01); G09G 2330/02 (2013.01); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H10K 59/126 (2023.02);
Abstract

The display substrate includes a shift register arranged on a base substrate, and the shift register includes a plurality of stages of driving circuits; a plurality of stages of the driving circuit are provided in the driving circuit area of the base substrate; a stage of driving circuit area includes a first area and a second area, and the first area is provided with a first type of transistor included in the driving circuit, a second type of transistor included in the driving circuit is provided in the second area; one side of the first area is a side of the power line away from the second area, and the other side of the first area is a side close to the second area of an active layer of the first type of transistor close to the second area.


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