The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Mar. 08, 2023
Infineon Technologies Ag, Neubiberg, DE;
Bernhard Endres, Nabburg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A tunnel magnetoresistance (TMR) sensing element includes a layer stack having a tantalum-nitride (TaN) layer; a reference layer system; a magnetic free layer having a magnetically free magnetization; and a tunnel barrier layer arranged between the reference layer system and the magnetic free layer. The reference layer system includes a pinned layer having a fixed pinned magnetization; a reference layer having a having a fixed reference magnetization; a coupling interlayer arranged between the pinned layer and the reference layer; and a natural antiferromagnetic (NAF) layer comprising iridium-manganese (IrMn), wherein the NAF layer is formed in direct contact with the TaN layer, wherein the NAF layer is configured to hold the fixed pinned magnetization in a first magnetic orientation and hold the fixed reference magnetization in a second magnetic orientation, and wherein the direct contact of the NAF layer with the TaN layer increases a blocking temperature of the NAF layer.