The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Nov. 21, 2019
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, CN;
Weimin Li, New York, NY (US);
Wenjie Yu, Shanghai, CN;
Lei Zhu, Shanghai, CN;
Yiying Wang, Shanghai, CN;
Abstract
The present invention provides a high-throughput vapor deposition apparatus and a vapor deposition method. A rotary workbench () is located in a reaction chamber (); a gas introduction device () is located in the reaction chamber () and above the rotary workbench (); a plurality of through holes () is provided on the gas introduction device (); a gas isolation structure () divides an upper chamber () into an isolation gas chamber () and a reaction gas chamber () which are isolated from each other; an isolation gas is introduced into the isolation gas chamber () via an isolation gas introduction channel (), and a reaction gas is introduced into the reaction gas chamber () via a reaction gas introduction channel (), for carrying out thin film deposition on an area of a substrate corresponding to the reaction gas chamber (). The high-throughput vapor deposition apparatus only requires one isolation gas supply system and one reaction gas isolation system, a total of two systems, and thus is simple in structure, easy to implement, and good in isolation.