The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

May. 01, 2020
Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Adrian Thomas, Newport, GB;

Steve Burgess, Newport, GB;

Amit Rastogi, Newport, GB;

Tony Wilby, Newport, GB;

Scott Haymore, Newport, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 3/08 (2006.01); C01B 21/06 (2006.01); C23C 14/00 (2006.01); C23C 14/02 (2006.01); C23C 14/06 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H10N 30/045 (2023.01); H10N 30/076 (2023.01); H10N 30/082 (2023.01);
U.S. Cl.
CPC ...
H10N 30/076 (2023.02); C01B 21/0602 (2013.01); C23C 14/0036 (2013.01); C23C 14/021 (2013.01); C23C 14/0617 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/176 (2013.01); H10N 30/045 (2023.02); H10N 30/082 (2023.02); C01P 2006/40 (2013.01); C01P 2006/90 (2013.01);
Abstract

In a method for sputter depositing an additive-containing aluminium nitride film containing an additive element like Sc or Y, a first layer of the additive-containing aluminium nitride film is deposited onto a substrate disposed within a chamber by pulsed DC reactive sputtering. A second layer of the additive-containing aluminium nitride film is deposited onto the first layer by pulsed DC reactive sputtering. The second layer has the same composition as the first layer. A gas or gaseous mixture is introduced into the chamber when depositing the first layer. A gaseous mixture comprising nitrogen gas and an inert gas is introduced into the chamber when depositing the second layer. The percentage of nitrogen gas in the flow rate (in sccm) when depositing the first layer is greater than that when depositing the second layer.


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