The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Oct. 27, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Hyun Ho Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor memory device, and a method of manufacturing the same, includes a first stack and a second stack stacked on a semiconductor substrate in a cell region of the semiconductor memory device and a slit region of the semiconductor memory device adjacent to the cell region. The semiconductor memory device also includes a plurality of cell plugs at least partially passing through the second stack and the first stack of the cell region and extending in a vertical direction, a slit at least partially passing through the second stack and the first stack of the slit region, and a protective pattern disposed between the slit and dummy cell plugs adjacent to the slit among the plurality of cell plugs.


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