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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12207465 B1

PDFFull Text
Date of Patent:
Jan. 21, 2025

Filed:

Mar. 24, 2021

Semiconductor memory device including vertical insulating pattern including a diffused metal and method of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byung Chul Jang, Suwon-si, KR;

Sang-Yong Park, Suwon-si, KR;

Jae Duk Lee, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

HARNESS, DICKEY & PIERCE, P.L.C.

Primary Examiner:

Kimberly N Rizkallah

Assistant Examiner:

Zhijun undefined Xu

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor memory device includes a stacked structure on a substrate and a vertical structure penetrating the stacked structure. The stacked structured includes a plurality of conductive lines stacked on the substrate. The vertical structure may include a vertical insulating pattern and a channel film extending along sidewalls of the vertical insulating pattern. The vertical insulating pattern may include an inner region and an outer region. The outer region of the vertical insulating pattern may be placed between the channel film and the inner region of the vertical insulating pattern, and the outer region of the vertical insulating pattern may include a diffused metal.

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