The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Feb. 25, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Fredrick David Fishburn, Aptos, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods for forming 3D DRAM leverage L-pad formations to increase memory density. Methods may include etching a substrate to form two Si walls oriented parallel to each other and forming a space therebetween, depositing a plurality of alternating Si layers and SiGe layers using epitaxial growth processes to form horizontal deposition layers on the space between the two Si walls and vertical deposition layers on sidewalls of the two Si walls, depositing a CMP stop layer on the substrate, planarizing the substrate to the CMP stop layer, removing a portion of a top of the two Si walls and forming an L-pad formation, deep etching a pattern of holes into the space between the two Si walls in horizontal portions of the plurality of alternating Si layers and SiGe layers, and forming vertical wordline structures from the pattern of holes in the horizontal portions.