The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Oct. 12, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Tatsuki Nishino, Kanagawa, JP;

Hiroki Hiyama, Kanagawa, JP;

Shizunori Matsumoto, Kanagawa, JP;

Takahiro Miura, Kanagawa, JP;

Akihiko Miyanohara, Tokyo, JP;

Tomohiro Matsumoto, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/704 (2023.01); G01J 1/44 (2006.01); G01S 7/24 (2006.01); G01S 17/89 (2020.01); H01L 27/146 (2006.01); H04N 25/50 (2023.01); H04N 25/63 (2023.01); H04N 25/73 (2023.01);
U.S. Cl.
CPC ...
H04N 25/704 (2023.01); G01J 1/44 (2013.01); H01L 27/14643 (2013.01); H04N 25/50 (2023.01); G01J 2001/4466 (2013.01);
Abstract

To control an excess bias to an appropriate value in a light detection device. A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.


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