The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Sep. 07, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yohei Mitsui, Tokyo, JP;

Yasutaka Imamura, Tokyo, JP;

Takeshi Horiguchi, Tokyo, JP;

Yasushige Mukunoki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/06 (2006.01); H03K 17/0812 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H03K 17/063 (2013.01); H03K 17/08122 (2013.01);
Abstract

A semiconductor device includes a power switching element and a drive device to drive the power switching element. The drive device includes a voltage source, a switching element, a capacitor connected in parallel to the voltage source with the switching element being interposed, a switching element provided between the capacitor and a gate terminal of the power switching element, a first comparison device to output a result of comparison between a voltage of the capacitor and a reference value VQR, a second comparison device to output a result of comparison between a gate voltage of the power switching element and a reference value VR, and a short-circuit determination unit that makes determination as to a short circuit of the power switching element based on an output signal from the first comparison device and an output signal from the second comparison device.


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