The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Aug. 16, 2021
Psemi Corporation, San Diego, CA (US);
Yucheng Tong, San Diego, CA (US);
Parvez H. Daruwalla, San Diego, CA (US);
pSemi Corporation, San Diego, CA (US);
Abstract
Multi-way signal switch designs and methods for reducing parasitic capacitance. In a first embodiment, two or more series-coupled FET shunt-switches are coupled to at least one switch cell through-switch. At least one shunt-switch is set to an OFF state during normal operation so as to function as a capacitor, while at least one other shunt-switch is set to behave like a capacitor in a switch cell ON state, and is set to behave like a resistor in a switch cell OFF state. In a second embodiment, the combination of at least one FET shunt-switch coupled in series with a capacitor functions as a shunt connection for the signal path, wherein the FET shunt-switch is set to behave like a capacitor when the switch cell is in an ON state, and is set to behave like a resistor when the switch cell is in an OFF state.