The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Jun. 25, 2020
Aledia, Echirolles, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Bruno-Jules Daudin, Grenoble, FR;
Walf Chikhaoui, Voiron, FR;
Marion Gruart, Saint-Egreve, FR;
Philippe Gilet, Teche, FR;
Aledia, Echirolles, FR;
Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris, FR;
Universite Grenoble Alpes, Saint Martin d'Heres, FR;
Abstract
A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.