The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Dec. 10, 2020
Centre National DE LA Recherche Scientifique, Paris, FR;
Institut Polytechnique DE Grenoble, Grenoble, FR;
Universite Savoie Mont Blanc, Chambèry, FR;
Universite Grenoble Alpes, Saint-Martin-d'Yères, FR;
Christopher Bauerle, Grenoble, FR;
Jean-François Roux, Le Bourget du Lac, FR;
Giorgos Georgiou, Grenoble, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
INSTITUT POLYTECHNIQUE DE GRENOBLE, Grenoble, FR;
UNIVERSITE SAVOIE MONT BLANC, Chambèry, FR;
UNIVERSITE GRENOBLE ALPES, Saint-Martin-d'Yères, FR;
Abstract
A photoconductive transducer intended to generate or detect waves in the terahertz frequency domain or in the picosecond pulse domain is provided. The transducer comprises a three-dimensional structure that includes, in this order, a first planar electrode, an array of nano-columns embedded in a layer of resist and a second planar electrode parallel to the first planar electrode. The design of the transducer increases the optical-to-terahertz conversion efficiency by means of photonic and plasmonic resonances and by means of high and homogeneous electric fields. The height of the nano-columns as well as the thickness of the resist range between 100 nanometres and 400 nanometres. The width of the nano-columns is between 100 nanometres and 400 nanometres, the distance between two adjacent nano-columns is between 300 nanometres and 500 nanometres, the nano-columns are made of a III-V semiconductor. The second electrode is transparent, so as to allow the transmission of a laser source towards the photo-absorbing nano-columns.