The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Jun. 09, 2022
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Belinda Simone Edmee Piernas, Mason, NH (US);

David Russell Hoag, Walpole, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/87 (2006.01); H01L 21/8252 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/8252 (2013.01); H01L 29/868 (2013.01);
Abstract

A number of Monolithic Microwave Integrated Circuit (MMIC) devices including combinations of PIN and Schottky diodes, with integrated passive electrical components fabricated and electrically connected among them, are described herein, along with new process techniques for forming the MMIC devices. In one example, a monolithic semiconductor includes a substrate, a plurality of layers of semiconductor materials over the substrate, Schottky and Ohmic contacts on a first subset of the plurality of layers for a Schottky diode, and PIN diode Ohmic contacts on a second subset of the plurality of layers for a PIN diode. The device can also include an etch stop layer between the first subset of the plurality of layers and the second subset of the plurality of layers. The etch stop layer facilitates selective etching and isolation of the Schottky diode from the PIN diode by consecutive etchings.


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