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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12206023 B1

PDFFull Text
Date of Patent:
Jan. 21, 2025

Filed:

Oct. 19, 2023

Oxide semiconductor film and semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Masahiro Takahashi, Atsugi, JP;

Kengo Akimoto, Atsugi, JP;

Shunpei Yamazaki, Setagaya, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Attorneys:

Eric J. Robinson

Robinson Intellectual Property Law Office, P.C.

Primary Examiner:

Herve-Louis Y Assouman

Int. Cl.
CPC ...
H01L 29/786 (2006.01); C01G 15/00 (2006.01); G02F 1/1343 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 21/02 (2006.01); H01L 21/12 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H10K 59/121 (2023.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C01G 15/006 (2013.01); G02F 1/134309 (2013.01); G02F 1/136213 (2013.01); G02F 1/1368 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01); H01L 27/1225 (2013.01); H01L 27/1285 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); C01P 2006/40 (2013.01); G02F 2201/123 (2013.01); H10K 59/1213 (2023.02);
Abstract

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0<x<2, 0<y<2, and m=1 to 3 are satisfied).

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