The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Feb. 22, 2022
Kabushiki Kaisha Tokai-rika-denki-seisakusho, Aichi-ken, JP;
Kengo Shima, Aichi-ken, JP;
Kazuya Adachi, Aichi-ken, JP;
KABUSHIKI KAISHA TOKAI-RIKA-DENKI-SEISAKUSHO., Aichi-ken, JP;
Abstract
An electrostatic protection element including: a first impurity layer of second conductivity type formed on a semiconductor substrate of first conductivity type; a second impurity layer of the first conductivity type formed within the first impurity layer; a first contact layer of the first conductivity type formed in a region within the first impurity layer other than at the second impurity layer; a second and a third contact layer both of the second conductivity type and formed within the second impurity layer; and multilayer wiring connected through a stack structure to the first, the second, and the third contact layer, wherein the stack structure includes at least a first layer wiring connected to each of the first, the second, and the third contact layer, and a second layer wiring connected to the first layer wiring directly above each of the first, the second, and the third contact layer.