The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Dec. 27, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Tatsuya Naito, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device includes a first region in which a drift, base, and accumulation regions are stacked. Transistor cells are each provided partially in the first region and include at least one trench extending into the drift region. A second region includes a well region provided on an edge termination region side surrounding the first region. A third region of a predetermined width is between the first and second regions, inside of which the transistor cells are partially provided. A bottom region is provided in the first region, adjacent to a bottom of the trench, and between the accumulation and drift regions, the bottom region not extending into the third region, its upper surface located below the base region's lower surface; and first and second electrodes configured to flow current therebetween. The bottom region is spaced apart from the base region by the accumulation region in the depth direction.