The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Aug. 31, 2021
Fuzhou Boe Optoelectronics Technology Co., Ltd., Fujian, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Bin Lin, Beijing, CN;
Liangliang Li, Beijing, CN;
Zheng Liu, Beijing, CN;
Bo Hu, Beijing, CN;
Rui Zhang, Beijing, CN;
Xinlin Peng, Beijing, CN;
FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Fujian, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
Provided is a metal-oxide thin-film transistor. The metal-oxide thin-film transistor includes a gate, a gate insulation layer, a metal-oxide semiconductor layer, a source electrode, a drain electrode, and a passivation layer that are successively disposed on a base substrate; wherein the source electrode and the drain electrode are both in a laminated structure, wherein the laminated structure of the source electrode or the drain electrode at least includes a bulk metal layer and an electrode protection layer; wherein the electrode protection layer includes a metal or a metal alloy; the electrode protection layer is at least disposed between the metal-oxide semiconductor layer and the bulk metal layer; wherein a metal-oxide layer is disposed between the electrode protection layer and the bulk metal layer.