The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Mar. 04, 2022
Applicant:
Proterial, Ltd., Tokyo, JP;
Inventors:
Tsuyoshi Miura, Tokyo, JP;
Hodaka Ichikawa, Tokyo, JP;
Naoya Kimura, Tokyo, JP;
Hiroyuki Okuda, Tokyo, JP;
Taisuke Hirooka, Tokyo, JP;
Assignee:
PROTERIAL, LTD., Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); C23C 16/32 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); C23C 16/325 (2013.01); C30B 25/20 (2013.01); C30B 29/36 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01);
Abstract
A method for manufacturing a silicon carbide epitaxial substrate which has a first surface which is a (000-1) C-face, a silicon carbide epitaxial layer located on the first surface of the silicon carbide substrate, and a line-shaped surface defect density on a top surface of the silicon carbide epitaxial layer is less than 1.0 cmand a stacking fault density is less than 1.2 cm.
Miura, Tsuyoshi. (2025). Silicon carbide epitaxial substrate and method for manufacturing same (U.S. Patent No. 12205989). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12205989
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile