The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

May. 28, 2020
Applicant:

Technische Universität München, Munich, DE;

Inventors:

Christian Dangel, Munich, DE;

Jonathan Finley, Aschheim, DE;

Kai Müller, Eching, DE;

Frederik Bopp, Munich, DE;

Arne Ludwig, Witten, DE;

Nikolai Bart, Bochum, DE;

Andreas Wieck, Hattingen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); H01L 21/02381 (2013.01); H01L 21/02395 (2013.01); H01L 21/0245 (2013.01); H01L 21/02463 (2013.01); H01L 21/02496 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract

A wafer includes a substrate and at least one intermediate layer formed on a surface of the substrate. The at least one intermediate layer covers the surface of the substrate at least partially. An outer surface of the at least one intermediate layer is directed away from the surface of the substrate. The wafer further includes nanostructures grown on the outer surface of the at least one intermediate layer. The at least one intermediate layer is formed in such a way that positions of growth of the nanostructures are predetermined on the outer surface of the at least one intermediate layer. At least one nanostructure material of the nanostructures is assembled at the positions of growth of the nanostructures.


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