The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Nov. 17, 2021
Applicant:
Korea Advanced Nano Fab Center, Gyeonggi-do, KR;
Inventors:
Dong Hwan Jun, Gyeonggi-Do, KR;
Hyun Mi Kim, Gyeonggi-do, KR;
Sang Tae Lee, Gyeonggi-do, KR;
Chan Soo Shin, Gyeonggi-do, KR;
Assignee:
KOREA ADVANCED NANO FAB CENTER, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02631 (2013.01); H01L 27/088 (2013.01); H01L 29/778 (2013.01);
Abstract
A nanoscale thin film structure and implementing method thereof, and, more specifically, a nanoscale thin film structure of which target structure is designed with quantized thickness, and a method to implement the nanoscale thin film structure by which the performance of the manufactured nanodevice can be implemented the same as the designed performance, thereby applicable to high sensitivity high performance electronic/optical sensor devices.