The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Mar. 30, 2020
Max-planck-gesellschaft Zur Förderung Der Wissenschaften E.v., Munich, DE;
Rainer Richter, Munich, DE;
Florian Schopper, Munich, DE;
Jelena Ninkovic, Munich, DE;
Alexander Bähr, Gröbenzell, DE;
Abstract
An avalanche photodiode array for detecting electromagnetic radiation comprises: a semiconductor substrate () having a first main surface () and a second main surface (), which are opposite one another, a plurality of n-doped anode regions () formed at the first main surface () and separated from one another by pixel isolation regions (), a p-doped cathode region () arranged at the second main surface () opposite the anode regions, a drift region () between the plurality of anode regions () and the cathode region (), and a p-doped multiplication layer () arranged below the plurality of anode regions () and below the pixel isolation regions (), and is characterized by an n-doped field reduction layer () arranged below the plurality of anode regions () and the pixel isolation regions () and above the multiplication layer ().