Sensor with long wavelength infrared polarization sensitive pixels

Abstract

Long wavelength polarization sensitive image sensor devices and methods are provided. The image sensor includes pixels that each include a plurality of sub-pixels. At least some of the sub-pixels within each pixel are associated with a grid structure. Each grid structure includes two or more linear grid elements that are parallel to one another. The grid elements are disposed directly on a light incident surface of a sensor substrate in which the sub-pixels are formed, and are electrically floating. The sub-pixels can be formed as photodiodes in a silicon or other semiconductor substrate. Infrared light incident on the pixels results in the heating of the grid elements, and in particular of grid elements oriented in a direction that is parallel to a polarization of the incident light, which in turn generates a current in associated a sub-pixels. A polarization state and intensity of the incident light can be determined.