The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Oct. 10, 2023
Applicant:
Psemi Corporation, San Diego, CA (US);
Inventor:
Simon Edward Willard, Irvine, CA (US);
Assignee:
pSemi Corporation, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H03F 3/195 (2006.01); H03F 3/213 (2006.01); H03F 3/217 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1203 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/42384 (2013.01); H01L 29/4916 (2013.01); H01L 29/78615 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H03F 3/2171 (2013.01); H03F 2200/451 (2013.01);
Abstract
Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is 'off' (Vg approximately 0 volts). When the transistor is “on” (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.