The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Apr. 14, 2023
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Masayuki Kitamura, Yokkaichi Mie, JP;
Atsushi Kato, Yokkaichi Mie, JP;
Hiroaki Matsuda, Yokkaichi Mie, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/76843 (2013.01); H01L 23/53238 (2013.01);
Abstract
A semiconductor device includes an interconnect including (i) a first layer, and (ii) a second layer provided on the first layer and including copper. The device also includes a plug provided on the interconnect and including (a) a third layer including titanium and nitrogen, and (b) a fourth layer provided on the third layer and including tungsten. A concentration of chlorine in the third layer is less than or equal to 5.0×10atoms/cm, and a concentration of oxygen at the interface between the third layer and the fourth layer is less than or equal to 5.0×10atoms/cm.