Method to create mimcap designs across changing mimcap structures

Abstract

A system and method for fabricating on-die metal-insulator-metal capacitors capable of maintaining a similar capacitance for design reuse across multiple semiconductor fabrication processes are described. In various implementations, an integrated circuit includes multiple metal-insulator-metal (MIM) capacitors. The MIM capacitors are formed between two signal nets. The integrated circuit includes multiple intermediate metal layers (or metal plates) formed between two signal nets. Subsequent semiconductor fabrication processes typically increase a number of metal plates that can be formed in the dielectric layer, such as an oxide layer, between two signal nets. To permit design reuse across multiple semiconductor fabrication processes, for a particular MIM capacitor designated to maintain a same capacitance, the additional metal plates for the particular MIM capacitor are formed as floating nets. Additionally, the same electrode plates of the particular MIM capacitor are used across the multiple semiconductor fabrication processes.