The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Jun. 09, 2022
Applicant:

Montage Technology Co., Ltd., Shanghai, CN;

Inventor:

Xiong Zhang, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 23/495 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/4882 (2013.01); H01L 23/49568 (2013.01); H01L 28/20 (2013.01);
Abstract

Self-cooling semiconductor resistor and manufacturing method thereof are provided. The resistor comprises: multiple N-type and P-type wells in a semiconductor substrate, first polysilicon gates on each N-type well, second polysilicon gates on each P-type well, and metal interconnect layers. The multiple N-type and P-type wells are arranged alternately in row and column direction, respectively. N-type and P-type deep doped regions are formed on each N-type and P-type well, respectively. The first and second polysilicon gates are N-type and P-type deep doped respectively, and there is no gate oxide layer between the first and second polysilicon gates and the semiconductor substrate. The metal interconnect layers connect the multiple first and second polysilicon gates as an S-shaped structure. In the present application, the flow direction of heat is from the inside of the resistor to its surface, thereby realizing heat dissipation and cooling.


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