The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

May. 18, 2021
Applicant:

U.s. Army Devcom, Army Research Laboratory, Adelphi, MD (US);

Inventors:

Patrick J. Taylor, Oakton, VA (US);

George J. de Coster, Vienna, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/30 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3003 (2013.01); H01L 29/04 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

A topological material includes a lattice crystalline structure; and a material defect in the lattice crystalline structure that is treatable by hydrogen passivation that chemically mitigates an electronic charge associated with the material defect. The lattice crystalline structure includes dangling bonds in an atomic arrangement of the material defect of the lattice crystalline structure, and the hydrogen passivation may apply hydrogen to chemically passivate the dangling bonds of the material defect. The hydrogen passivation may be achieved by diffusing hydrogen into common materials of the lattice crystalline structure. The hydrogen passivation may chemically and/or electrostatically neutralize an electronic activity associated with the material defect.


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