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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12205645 B1

PDFFull Text
Date of Patent:
Jan. 21, 2025

Filed:

Apr. 18, 2022

Three-dimensional memory structure fabrication using channel replacement

Applicant:

Sunrise Memory Corporation, San Jose, CA (US);

Inventors:

Shohei Kamisaka, Kanagawa, JP;

Vinod Purayath, Sedona, AZ (US);

Assignee:

SUNRISE MEMORY CORPORATION, San Jose, CA (US);

Attorneys:

SunRise Memory Corporation

EDWARD KWOK

CARMEN COOK

Primary Examiner:

Laura M Menz

Int. Cl.
CPC ...
H01L 21/00 (2006.01); G11C 16/04 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract

A process for fabricating a three-dimensional NOR memory string of storage transistors implements a channel-last fabrication process with channel replacement using silicon germanium (SiGe). In particular, the process uses silicon germanium as a sacrificial layer, to be replaced with the channel material after the charge-storage layer of the storage transistors is formed. In this manner, the channel region is prevented from experiencing excessive high-temperature processing steps, such as during the annealing of the charge-storage layer.

Find Patent Forward Citations

Kamisaka, Shohei. (2025). Three-dimensional memory structure fabrication using channel replacement (U.S. Patent No. 12205645). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12205645

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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