The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Feb. 02, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Poornima Venkatasubramanian, Bengaluru, IN;

Pushp Khatter, Bengaluru, IN;

Lava Kumar Pulluru, Bengaluru, IN;

Manish Chandra Joshi, Bengaluru, IN;

Ved Prakash, Bengaluru, IN;

Anurag Kumar, Bengaluru, IN;

Surendra Deshmukh, Bengaluru, IN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/412 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/412 (2013.01);
Abstract

A write assist circuit includes a first power control circuit and second power control circuit, each comprising a first switch and second switch. The first switch of first power control circuit has first drive strength and is configured to be controlled by a column select line, a power control line, a first bit line, and a power supply. The first switch of the second power control circuit has the first drive strength and is configured to be controlled by the column select line, the power control line, a second bit line, and the power supply. The second switch has a second drive strength and is configured to be controlled by the power control line. The first switches are configured to be controlled using input data on first- and second-bit line, respectively, for altering power supply to first inverter and second inverter of SRAM bitcell.


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