The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Apr. 30, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoonsung Bae, Seoul, KR;
Seungho Gwak, Seoul, KR;
Kwangrak Kim, Gunpo-si, KR;
Seunggun Byoun, Suwon-si, KR;
Gilwoo Song, Hwaseong-si, KR;
Younghoon Shin, Yongin-si, KR;
Kyungwon Yun, Hwaseong-si, KR;
Chiyoung Lee, Seoul, KR;
Taeyong Jo, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device includes forming a pattern on a wafer, measuring a spectrum of the pattern on the wafer, with a spectral optical system, performing an analysis of the spectrum through a deep learning model for predicting pattern characteristics, the deep learning model being trained based on a domain knowledge, and evaluating the pattern on the wafer based on the analysis of the spectrum, wherein the domain knowledge includes a noise inducing factor of the spectral optical system.