The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

May. 13, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Wen Ma, Sunnyvale, CA (US);

Tung Thanh Hoang, San Jose, CA (US);

Martin Lueker-Boden, Fremont, CA (US);

Assignee:

SanDisk Technologies LLC, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G06F 3/06 (2006.01); G06N 3/04 (2023.01); G06N 3/063 (2023.01); G06N 5/04 (2023.01); G11C 11/54 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G06N 3/04 (2013.01); G06F 3/0604 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01); G06N 3/063 (2013.01); G06N 5/04 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/54 (2013.01); G11C 13/0028 (2013.01); G11C 13/003 (2013.01);
Abstract

A non-volatile memory device is configured for in-memory computation of layers of a neural network by storing weight values as conductance values in memory cells formed of a series combination of a threshold switching selector, such as an ovonic threshold switch, and a programmable resistive element, such as a ReRAM element. By scaling the input voltages (representing inputs for the layer of the neural network) relative to the threshold values of the threshold switching selectors, dropout for inputs can be implemented to reduce overfitting by the neural network.


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