The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Oct. 26, 2021
Applicant:

Scantinel Photonics Gmbh, Ulm, DE;

Inventor:

Sandeep Ummethala, Karlsruhe, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/126 (2006.01); G01S 7/481 (2006.01); G01S 17/42 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/126 (2013.01); G01S 7/4817 (2013.01); G01S 17/42 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/1215 (2013.01);
Abstract

An integrated on-chip polarization rotator splitter () comprises a waveguide polarization rotator () having a first and a second layer () that form a rib waveguide () together and are both made of silicon nitride. The first layer () has a first, a second and a third section. The first layer () has a first width (w) that increases in the first section (S), is constant in the second section (S) and decreases in the third section (S). The second layer () has a second width (w) that continuously increases. The polarization rotator splitter () further includes a waveguide polarization splitter () comprising a first strip waveguide () and a second strip waveguide () that are separated by a gap (). The first and second strip waveguides () are also made of silicon nitride. The first and second strip waveguide () form an asymmetric evanescent direction coupler.


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