The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Jan. 07, 2022
Applicant:
Google Llc, Mountain View, CA (US);
Inventor:
David Kirtland Fork, Mountain View, CA (US);
Assignee:
GOOGLE LLC, Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 60/80 (2023.01); H10N 60/01 (2023.01); H10N 60/12 (2023.01);
U.S. Cl.
CPC ...
H10N 60/805 (2023.02); H10N 60/0912 (2023.02); H10N 60/12 (2023.02);
Abstract
Superconducting tunnel junctions for use in, for instance, quantum processors are provided. In one example, a method can include forming a first superconducting layer on a substrate, the first superconducting layer comprising aluminum. The method can include forming a dielectric layer on the first superconducting layer. The method can include forming a trench structure in the dielectric layer. The method can include forming a crystalline dielectric layer having a spinel crystal structure in the trench structure. The method can include forming a second superconducting layer on the crystalline dielectric layer.