The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Apr. 20, 2023
Nuvoton Technology Corporation, Hsinchu, TW;
Cheng-Tao Li, Hsinchu, TW;
Wei-Jean Liu, Hsinchu, TW;
NUVOTON TECHNOLOGY CORPORATION, Hsinchu, TW;
Abstract
In a driving circuit, a drain of first NMOS transistor receives current with a positive temperature coefficient provided by current source, and a gate of first NMOS transistor and a gate of second NMOS transistor are electrically connected to the drain of first NMOS transistor. A drain and a source of second NMOS transistor respectively receive an input voltage and generate an output voltage for driving a load. Two ends of resistor are respectively electrically connected to a source of first NMOS transistor and an emitter of PNP bipolar junction transistor. A base of PNP bipolar junction transistor is electrically connected to a source of second NMOS transistor, and a collector of PNP bipolar junction transistor is electrically connected to a low voltage. By selecting the resistance value of the resistor, an overdrive voltage or a turned-on resistance value of second NMOS transistor is independent of a temperature variation.