The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Feb. 05, 2021
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Shinichirou Wada, Tokyo, JP;

Tomohiko Yano, Tokyo, JP;

Yoichiro Kobayashi, Hitachinaka, JP;

Assignee:

HITACHI ASTEMO, LTD., Hitachinaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H01L 29/78 (2006.01); H02M 1/00 (2006.01); H02M 1/088 (2006.01); H02M 7/5387 (2007.01);
U.S. Cl.
CPC ...
H02M 7/53871 (2013.01); H01L 29/7805 (2013.01); H02M 1/0009 (2021.05); H02M 1/088 (2013.01); H02M 1/08 (2013.01);
Abstract

Provided is a power conversion device capable of observing a chip temperature with high accuracy without increasing a cost of the power conversion device mounted with a current sense element for observing a main current of a power device. A main control MOSFET, a current MOSFET, and a diodeconnected to a source electrodeof the main control MOSFETand a source electrodeof the current MOSFETare mounted in a chip of a power device, a temperature measurement circuitis connected to the source electrodeof the current MOSFET, and when the main control MOSFETis in an off state, a forward current (I) is caused to flow through the diode, and an anode potential is observed to measure the chip temperature.


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