The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Oct. 19, 2022
Applicant:

Graphenix Development, Inc., Williamsville, NY (US);

Inventors:

John C. Brewer, Rochester, NY (US);

Kevin Tanzil, Rochester, NY (US);

Paul D. Garman, Pittsford, NY (US);

Robert G. Anstey, Tonawanda, NY (US);

Isaac N. Lund, Salinas, CA (US);

Assignee:

Graphenix Development, Inc., Williamsville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/62 (2006.01); H01G 11/26 (2013.01); H01G 11/46 (2013.01); H01G 11/68 (2013.01); H01M 4/04 (2006.01); H01M 4/133 (2010.01); H01M 4/134 (2010.01); H01M 4/136 (2010.01); H01M 4/38 (2006.01); H01M 4/485 (2010.01); H01M 4/525 (2010.01); H01M 4/58 (2010.01); H01M 4/64 (2006.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/62 (2013.01); H01G 11/26 (2013.01); H01G 11/46 (2013.01); H01G 11/68 (2013.01); H01M 4/0404 (2013.01); H01M 4/0428 (2013.01); H01M 4/0452 (2013.01); H01M 4/0471 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/136 (2013.01); H01M 4/382 (2013.01); H01M 4/386 (2013.01); H01M 4/485 (2013.01); H01M 4/525 (2013.01); H01M 4/58 (2013.01); H01M 4/64 (2013.01); H01M 4/661 (2013.01); H01M 4/664 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01);
Abstract

A prelithiated anode may include a current collector may include a metal oxide layer. Prelithiated anodes may in addition include a lithiated storage layer overlaying the metal oxide layer. The lithiated storage layer may be formed by incorporating lithium into a continuous porous lithium storage layer may include at least 80 atomic % silicon. The lithiated storage layer may include less than 1% by weight of carbon-based binders. The lithiated storage layer may further include lithium in a range of 1% to 90% of a theoretical lithium storage capacity of the continuous porous lithium storage layer. Batteries may include the prelithiated anode.


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