The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
May. 19, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Byounghak Hong, Albany, NY (US);
Seunghyun Song, Albany, NY (US);
Kang-ill Seo, Albany, NY (US);
Daewon Ha, Hwaseong-si, KR;
Jason Martineau, Milpitas, CA (US);
Samsung Electronics Co., Ltd., Yongin-si, KR;
Abstract
Presented are structures and methods for forming such structures that allow for electrical or diffusion breaks between transistors of one level of a stacked transistor device, without necessarily requiring that a like electrical or diffusion break exists in another level of the stacked transistor device. Also presented, an electrical break between transistor devices may be formed by providing a channel of a first polarity with a false gate comprising a work-function metal of an opposite polarity.