The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Mar. 12, 2021
Hitachi Energy Ltd, Zürich, CH;
Wolfgang Amadeus Vitale, Aarau, CH;
Luca De-Michielis, Aarau, CH;
Boni Kofi Boksteen, Lenzburg, CH;
Elizabeth Buitrago, Windisch, CH;
Maxi Andenna, Dättwil, CH;
Hitachi Energy Ltd, Zürich, CH;
Abstract
A semiconductor device a first semiconductor layer of a first conductivity type at a first main side of a semiconductor wafer and a second semiconductor layer of a second conductivity type at second main side. The second semiconductor layer forms a pn junction with the first semiconductor layer. A first electrode is in ohmic contact with the first semiconductor layer and a second electrode layer is in ohmic contact with the second semiconductor layer. A first semiconductor region of the first conductivity type completely embedded in the second semiconductor layer and a second semiconductor region of the first conductivity type completely embedded in the second semiconductor layer.