The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Oct. 10, 2023
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Shouichirou Shiraishi, Nagasaki, JP;

Takuya Maruyama, Kanagawa, JP;

Shinichiro Yagi, Osaka, JP;

Shohei Shimada, Tokyo, JP;

Shinya Sato, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); B60R 11/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14607 (2013.01); B60R 11/04 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/1463 (2013.01); H01L 27/14645 (2013.01);
Abstract

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.


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