The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2025
Filed:
Oct. 20, 2021
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Tetsuo Takahashi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/324 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/404 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor apparatus includes a semiconductor substrate and a second electrode. Semiconductor substrate includes a device region and a peripheral region. An ndrift region and second electrode extend from device region to peripheral region. An n buffer layer and a p collector layer are provided also in peripheral region. Peripheral region is provided with an n type region. N type region is in contact with second electrode and n buffer layer. The turn-off loss of the semiconductor apparatus is reduced.