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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12199043 B1

PDFFull Text
Date of Patent:
Jan. 14, 2025

Filed:

Aug. 26, 2021

Semiconductor memory devices, methods for fabricating the same and electronic systems including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Geun Won Lim, Yongin-si, KR;

Beyoung Hyun Koh, Seoul, KR;

Yong Jin Kwon, Yongin-si, KR;

Joong Shik Shin, Yongin-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Steven H Loke

Assistant Examiner:

Anthony A Pulatov

Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 27/11529 (2017.01); H01L 27/11556 (2017.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor memory device may include a mold structure that includes mold insulation films and gate electrodes alternately stacked on a first substrate, a channel structure that penetrates the mold structure and intersects the gate electrodes, a block separation region that extends in a first direction parallel to an upper surface of the first substrate and cuts the mold structure, a first dam region and a second dam region spaced apart from each other, that each having a closed loop in a plan view and each cutting the mold structure, pad insulation films in the first and second dam regions that are alternately stacked with the mold insulation films and include a material different from the mold insulation films, and a through via which penetrates through the first substrate, the mold insulation films, and the pad insulation films, in the first dam region but not in the second dam region.

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