The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Oct. 21, 2019
Applicant:

The University of Tokyo, Tokyo, JP;

Inventors:

Junichi Takeya, Tokyo, JP;

Shunichiro Watanabe, Tokyo, JP;

Yu Yamashita, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01B 1/12 (2006.01); C08J 7/02 (2006.01); H01L 29/786 (2006.01); H01L 33/50 (2010.01); H10N 10/856 (2023.01);
U.S. Cl.
CPC ...
H01B 1/124 (2013.01); C08J 7/02 (2013.01); H01L 29/786 (2013.01); H01L 33/50 (2013.01); H10N 10/856 (2023.02);
Abstract

The method for producing an electrically conductive polymer material includes: a preparing step of providing a polymer film formed from an oriented polymeric semiconductor; and a doping step of introducing a first ion into the polymer film, in the doping step, a treatment liquid, which is obtained by dissolving, in an ionic liquid including the first ion having the opposite polarity to carriers to be injected into the polymeric semiconductor by doping in the form of a cation and an anion or an organic solvent having dissolved therein a salt including the first ion, a dopant which has the same polarity as that of the first ion and which oxidizes or reduces the polymeric semiconductor, is allowed to be in contact with the surface of the polymer film to form an intermediate of a second ion formed by ionization of the dopant and the polymeric semiconductor by a redox reaction, and to replace the second ion in the intermediate with the first ion.


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