The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Mar. 01, 2023
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Jung Taek You, Icheon-si Gyeonggi-do, KR;

Sang Sic Yoon, Icheon-si Gyeonggi-do, KR;

Kyu Dong Hwang, Icheon-si Gyeonggi-do, KR;

Chae Sung Lim, Icheon-si Gyeonggi-do, KR;

Saeng Hwan Kim, Icheon-si Gyeonggi-do, KR;

Hong Joo Song, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01); G06F 13/16 (2006.01); G06F 13/40 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/222 (2013.01); G06F 13/1673 (2013.01); G06F 13/1689 (2013.01); G06F 13/4086 (2013.01); G11C 7/1048 (2013.01); G11C 7/1057 (2013.01); G11C 2207/2254 (2013.01);
Abstract

A semiconductor system includes a controller configured to transmit a command address and a plurality of read strobe signals, and a semiconductor device including a first rank and a second rank that are configured to receive the command address and the plurality of read strobe signals and to perform a write operation and a read operation based on the command address. In the semiconductor device, the first rank is configured to calibrate a termination resistance value of the first rank to a target resistance value when a write operation for the first rank is performed. In the semiconductor device, the first rank is configured to calibrate the termination resistance value of the first rank to a dynamic resistance value based on the plurality of read strobe signals when a write operation for the second rank is performed.


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