The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Nov. 10, 2022
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Tomokazu Ishikura, Tokyo, JP;

Kazutaka Fujita, Tokyo, JP;

Raitaro Masaoka, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/12 (2006.01);
U.S. Cl.
CPC ...
G01N 27/125 (2013.01);
Abstract

A metal oxide semiconductor gas sensor includes a first electrode, a second electrode, and a sensing layer in contact with the first electrode and the second electrode. The sensing layer includes SnOand WO. A cross section of the sensing layer has an average porosity of 16.0% or more and 22.0% or less. SnOoccupies 60 vol % or more and 80 vol % or less and WOoccupies 20 vol % or more and 40 vol % or less in the sensing layer provided that pores are not counted as part of the sensing layer.


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