The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Aug. 06, 2021
Applicant:

Tokuyama Corporation, Yamaguchi, JP;

Inventors:

Yuki Kikkawa, Yamaguchi, JP;

Tomoaki Sato, Yamaguchi, JP;

Takafumi Shimoda, Yamaguchi, JP;

Takayuki Negishi, Yamaguchi, JP;

Assignee:

TOKUYAMA CORPORATION, Yamaguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/00 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C09K 13/00 (2013.01); H01L 21/32134 (2013.01);
Abstract

Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R, R, and Rare independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and Xis a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.


Find Patent Forward Citations

Loading…