The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2025

Filed:

Jan. 04, 2023
Applicant:

General Electric Company, Schenectady, NY (US);

Inventor:

Julin Wan, Rexford, NY (US);

Assignee:

General Electric Company, Evendale, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 41/50 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); C04B 41/52 (2006.01); C04B 41/87 (2006.01); C04B 41/89 (2006.01);
U.S. Cl.
CPC ...
C04B 41/5096 (2013.01); C04B 41/0072 (2013.01); C04B 41/009 (2013.01); C04B 41/4539 (2013.01); C04B 41/4545 (2013.01); C04B 41/5071 (2013.01); C04B 41/522 (2013.01); C04B 41/87 (2013.01); C04B 41/89 (2013.01);
Abstract

Methods are provided for repairing a defect on a silicon-containing substrate. The method may include applying a powder mixture into the defect of an existing coating on a surface of the silicon-containing substrate, wherein the powder mixture comprises silicon and germanium at a Ge mole fraction of 0.01 to 0.3; and heat treating the powder mixture within the defect at a sintering temperature that is 1150° C. to 1400° C. to form a repaired bondcoat within the defect. Repaired components are also provided that include a repaired bondcoat formed within the defect on the silicon-containing substrate, wherein the repaired bondcoat comprises a silicon-germanium phase comprising a Ge mole fraction of germanium of 0.01 to 0.3 and a Si mole fraction of silicon of 0.7 to 0.99.


Find Patent Forward Citations

Loading…